? 2005 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 200 v v gs(th) v ds = v gs , i d = 4 ma 2.5 5.0 v i gss v gs = 20 v dc , v ds = 0 200 na i dss v ds = v dss 25 a v gs = 0 v t j = 150 c 250 a r ds(on) v gs = 10 v, i d = 70 a 22 m v gs = 15 v, i d = 140a 17 m pulse test, t 300 s, duty cycle d 2 % symbol test conditions maximum ratings v dss t j = 25 c to 175 c 200 v v dgr t j = 25 c to 175 c; r gs = 1 m 200 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c75a i drms external lead current limit 75 a i dm t c = 25 c, pulse width limited by t jm 280 a i ar t c = 25 c60a e ar t c = 25 c 100 mj e as t c = 25 c4j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 4 p d t c = 25 c 300 w t j -55 ... +175 c t jm 175 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c v isol 50/60 hz, rms, 1 minute 2500 v~ f c mounting force 20..120/4.5..20 n/lb. weight 5g ds99298d(11/05) polarht tm hiperfet power mosfet isoplus247 tm ixfr 140n20p advance technical information n-channel enhancement mode avalanche rated; fast intrinsic diode features z international standard isolated package z ul recognized package z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect z fast intrinsic diode advantages z easy to mount z space savings z high power density v dss = 200 v i d25 = 75 a r ds(on) = 22m t rr 150 ns g = gate d = drain s = source isolated tab g d s isoplus247 (ixfr) e153432 (electrically isolated back surface)
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6771478 b2 ixfr 140n20p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 70 a, pulse test 50 84 s c iss 7500 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1800 pf c rss 280 pf t d(on) 30 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 70 a 35 ns t d(off) r g = 3.3 (external) 150 ns t f 90 ns q g(on) 240 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 70 a 50 nc q gd 100 nc r thjc 0.5 k/w r thck 0.15 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 90 a i sm repetitive 280 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25 a, -di/dt = 100 a/ s 150 ns q rm v r = 100 v, v gs = 0 v 0.6 c isoplus 247 outline 1-gate 2-drain 3-source 4-no connection advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated objective result. ixys reserves the right to change limits, test conditions, and dimensions without notice. dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 .244 r 4.32 4.83 .170 .190
? 2005 ixys all rights reserved ixfr 140n20p fig. 2. extended output characteristics @ 25 o c 0 30 60 90 120 150 180 210 240 270 300 012345678910 v d s - volts i d - amperes v gs = 10v 7v 6v 8v 9v fig. 3. output characteristics @ 150 o c 0 20 40 60 80 100 120 140 0123456 v d s - volts i d - amperes v gs = 10v 9v 8v 5v 6v 7v fig. 1. output characteristics @ 25 o c 0 20 40 60 80 100 120 140 00.5 11.5 22.5 v d s - volts i d - amperes v gs = 10v 9v 8v 7v 6v 5v fig. 4. r ds(on ) norm alized to i d = 70a value vs. junction temperature 0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r d s ( o n ) - normalize d i d = 140a i d = 70a v gs = 10v fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit fig. 5. r ds(on) norm alized to i d = 70a value vs. drain current 0.5 1 1.5 2 2.5 3 3.5 4 0 50 100 150 200 250 300 i d - amperes r d s ( o n ) - normalize d t j = 25 o c v gs = 10v t j = 175 o c v gs = 15v
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6771478 b2 ixfr 140n20p fig. 11. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 25 50 75 100 125 150 175 200 225 250 q g - nanocoulombs v g s - volts v ds = 100v i d = 70a i g = 10ma fig. 7. input adm ittance 0 25 50 75 100 125 150 175 200 225 4 4.5 5 5.5 6 6.5 7 7.5 8 v g s - volts i d - amperes t j = 150 o c 25 o c -40 o c fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 100 110 120 0 40 80 120 160 200 240 i d - amperes g f s - siemens t j = -40 o c 25 o c 150 o c fig. 9. source current vs. source-to-drain voltage 0 50 100 150 200 250 300 350 0.4 0.6 0.8 1 1.2 1.4 v s d - volts i s - amperes t j = 150 o c t j = 25 o c fig. 12. for w ar d-bias safe operating area 1 10 100 1000 1 10 100 1000 v d s - volts i d - amperes 100 s 1ms dc t j = 175 o c t c = 25 o c r ds(on) limit 10ms 25 s
? 2005 ixys all rights reserved ixfr 140n20p fig. 13. maxim um transient therm al resistance 0.01 0.10 1.00 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - oc / w
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